自定时RAM的设计与验证

Lars Skovby Nielsen
{"title":"自定时RAM的设计与验证","authors":"Lars Skovby Nielsen","doi":"10.1109/ASPDAC.1995.486398","DOIUrl":null,"url":null,"abstract":"This paper describes a self-timed static RAM. A single bit RAM is described in the design language SYNCHRONIZED TRANSITIONS and using the verification tools supporting this language, it is shown that the design is speed-independent. Furthermore, a transistor level implementation of the design is presented.","PeriodicalId":119232,"journal":{"name":"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Design and verification of a self-timed RAM\",\"authors\":\"Lars Skovby Nielsen\",\"doi\":\"10.1109/ASPDAC.1995.486398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a self-timed static RAM. A single bit RAM is described in the design language SYNCHRONIZED TRANSITIONS and using the verification tools supporting this language, it is shown that the design is speed-independent. Furthermore, a transistor level implementation of the design is presented.\",\"PeriodicalId\":119232,\"journal\":{\"name\":\"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASPDAC.1995.486398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.1995.486398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

本文介绍了一种自定时静态RAM。用设计语言SYNCHRONIZED TRANSITIONS描述了一个单比特RAM,并使用支持该语言的验证工具,表明该设计与速度无关。此外,还给出了该设计的晶体管级实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and verification of a self-timed RAM
This paper describes a self-timed static RAM. A single bit RAM is described in the design language SYNCHRONIZED TRANSITIONS and using the verification tools supporting this language, it is shown that the design is speed-independent. Furthermore, a transistor level implementation of the design is presented.
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