{"title":"电迁移短长度效应的实际好处,包括一种新的设计规则方法和一个抗电迁移的电网,增强了可移植性","authors":"R. Wachnik, R. Filippi, T. Shaw, P. Lin","doi":"10.1109/VLSIT.2000.852833","DOIUrl":null,"url":null,"abstract":"A simple first principles model is shown to accurately relate resistance saturation during electromigration to the current density and stripe length. Resistance saturation is found to be independent of temperature in the range 170-250/spl deg/C. The above observations allow for the development of a new design rule methodology. An electromigration resistant power grid may be designed which takes advantage of the short-length effect.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability\",\"authors\":\"R. Wachnik, R. Filippi, T. Shaw, P. Lin\",\"doi\":\"10.1109/VLSIT.2000.852833\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple first principles model is shown to accurately relate resistance saturation during electromigration to the current density and stripe length. Resistance saturation is found to be independent of temperature in the range 170-250/spl deg/C. The above observations allow for the development of a new design rule methodology. An electromigration resistant power grid may be designed which takes advantage of the short-length effect.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852833\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Practical benefits of the electromigration short-length effect, including a new design rule methodology and an electromigration resistant power grid with enhanced wireability
A simple first principles model is shown to accurately relate resistance saturation during electromigration to the current density and stripe length. Resistance saturation is found to be independent of temperature in the range 170-250/spl deg/C. The above observations allow for the development of a new design rule methodology. An electromigration resistant power grid may be designed which takes advantage of the short-length effect.