通过双色量子点等离子体增强将偏振转换为波长

T. James, P. Mulvaney, T. Davis, A. Roberts
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摘要

光学纳米天线由于能够在亚波长尺度上操纵电磁辐射而成为近年来光子学研究的热点。特别令人感兴趣的是光学纳米天线在纳米金刚石中半导体量子点(QD)和氮空位(NV)中心等量子源增强中的应用。就像它们的射频(RF)表亲一样,光学纳米天线能够增强和引导天线近场局部源的辐射到远场。本文报道的工作利用射频天线设计,将其应用于光学纳米天线的开发,以增强多个半导体量子点。特别是,在临时军用射频应用中常用的Vee天线设计,在这项工作中被用作光学纳米天线,通过极化控制来实现两个不同颜色量子点的选择性激发。Vee型天线在可见光谱中具有两种明亮的谐振模式,通常在光谱上相距约50 nm,它们由激发场的正交极化激发。利用v型天线的这两种谐振模式,可以选择性地增强两种不同颜色的量子点。v型天线采用电子束光刻技术在多层SiO2/Al/玻璃基板上以铝为天线材料制备。v型天线设计由两个偶极子天线组成,彼此定向为90°,其中天线之间的间隙和SiO2间隔层的厚度用于调节正交共振的频谱分离。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transforming polarisation to wavelength via two-colour quantum dot plasmonic enhancement
Optical nano-antennas have become a hot topic in photonics research recently due to their ability to manipulate electromagnetic radiation on the subwavelength scale. Of particular interest is the application of optical nano-antennas to enhancement of quantum sources such as semiconductor Quantum Dots (QD) and Nitrogen Vacancy (NV) centers in nano-diamond. Much like their Radio Frequency (RF) cousins, optical nano-antennas are able to enhance and direct radiation from a localized source in the near-field of the antenna to the far-field. The work reported here exploits RF antenna designs by applying them to the development of optical nano-antennas for enhancement of multiple semiconductor QDs. In particular, the Vee antenna design, commonly used in improvised military RF applications, is utilized in this work as an optical nano-antenna to enable the selective excitation of two different color QDs via polarization control. The Vee antenna has two bright resonant modes in the visible spectrum, typically spectrally separated by approximately 50 nm, which are excited by orthogonal polarizations of the excitation field. Using these two resonant modes of the Vee antenna, two different color QDs can be selectively enhanced. The Vee antennas are fabricated with E-beam Lithography using aluminum as the antenna material on a multilayer SiO2/Al/glass substrate. The Vee antenna design consists of two dipole antennas, orientated at 90° to each other, where the gap between the antennas and the thickness of the SiO2 spacer layer is used to tune the spectral separation of the orthogonal resonances.
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