{"title":"基站用多尔蒂功率放大器的设计","authors":"W. Yan, C. G. Liu, Z. Ding, Z. P. Wu","doi":"10.1109/ICMMT.2016.7762368","DOIUrl":null,"url":null,"abstract":"This paper expounds on the design of Doherty power amplifier. The principle of Doherty power amplifier is analyzed detailedly. We also introduce the procedure of designing matching networks. A Doherty power amplifier at band 2.11-2.17GHz is simulated with the MRF8S21120H transistor. The P1dB is above 52dBm, and its efficiency is above 41% in 6dB back-off region. It demonstrates an efficiency improvement of 12.1% at 6dB back-off point. And the upper IMD3 is -36.4dBc, the lower IMD3 is -36dBc, at 6.5dB back-off point. It has an acceptable linearity.","PeriodicalId":438795,"journal":{"name":"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of Doherty power amplifier for base-station application\",\"authors\":\"W. Yan, C. G. Liu, Z. Ding, Z. P. Wu\",\"doi\":\"10.1109/ICMMT.2016.7762368\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper expounds on the design of Doherty power amplifier. The principle of Doherty power amplifier is analyzed detailedly. We also introduce the procedure of designing matching networks. A Doherty power amplifier at band 2.11-2.17GHz is simulated with the MRF8S21120H transistor. The P1dB is above 52dBm, and its efficiency is above 41% in 6dB back-off region. It demonstrates an efficiency improvement of 12.1% at 6dB back-off point. And the upper IMD3 is -36.4dBc, the lower IMD3 is -36dBc, at 6.5dB back-off point. It has an acceptable linearity.\",\"PeriodicalId\":438795,\"journal\":{\"name\":\"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMMT.2016.7762368\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2016.7762368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of Doherty power amplifier for base-station application
This paper expounds on the design of Doherty power amplifier. The principle of Doherty power amplifier is analyzed detailedly. We also introduce the procedure of designing matching networks. A Doherty power amplifier at band 2.11-2.17GHz is simulated with the MRF8S21120H transistor. The P1dB is above 52dBm, and its efficiency is above 41% in 6dB back-off region. It demonstrates an efficiency improvement of 12.1% at 6dB back-off point. And the upper IMD3 is -36.4dBc, the lower IMD3 is -36dBc, at 6.5dB back-off point. It has an acceptable linearity.