实用的下一代独立和嵌入式DRAM电容器解决方案

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015414

Jong-Ho Lee, Jung-Hyoung Lee, Yun-seok Kim, Hyung-Seok Jung, N. Lee, Ho-Kyu Kang, K. Suh

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引用次数: 8

摘要

首次成功地展示了HfO/sub - 2/-Al/sub - 2/O/sub - 3/层压板的MIS电容器。在可接受的低漏电流条件下，实现了圆筒型MIS电容器的有效氧化厚度(EOT)为21 /spl / /。对于使用TiN电极的MIS电容器，无论介质材料如何，EOT值均为21 /spl / /。我们已经证实了减少EOT的可行性，尽管没有预沉积处理的简单工艺。HfO/sub - 2/-Al/sub - 2/O/sub - 3/层压板也适用于SIS电容器，在不改变电极材料的情况下，可以满足下一代MIM电容器的需求。

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Practical next generation solution for stand-alone and embedded DRAM capacitor

For the first time, MIS capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate are successfully demonstrated. The effective oxide thickness (EOT) of 21 /spl Aring/ with an acceptably low leakage current has been achieved for a cylinder-type MIS capacitor. The EOT of 21 /spl Aring/ is the smallest value reported for MIS capacitors with TiN electrodes regardless of dielectric material. We have confirmed the feasibility of reducing EOT in spite of the simple process without a pre-deposition treatment. HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is also useful for SIS capacitors and can satisfy the needs of MIM capacitors for the next generation without changing electrode material.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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