湿NO环境下栅极介质层间GeOxin Ge MOS电容器生长抑制研究

2005 IEEE Conference on Electron Devices and Solid-State Circuits Pub Date : 2005-12-19 DOI:10.1109/EDSSC.2005.1635219

P. Lai, C.X. Li, J. Xu, X. Zou, C. Chan

{"title":"湿NO环境下栅极介质层间GeOxin Ge MOS电容器生长抑制研究","authors":"P. Lai, C.X. Li, J. Xu, X. Zou, C. Chan","doi":"10.1109/EDSSC.2005.1635219","DOIUrl":null,"url":null,"abstract":"Wet NO oxidation with wet N2anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOxinterlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeOxin water-containing atmosphere.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Suppressed Growth of Interlayer GeOxin Ge MOS Capacitors with Gate Dielectric Prepared in Wet NO Ambient\",\"authors\":\"P. Lai, C.X. Li, J. Xu, X. Zou, C. Chan\",\"doi\":\"10.1109/EDSSC.2005.1635219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Wet NO oxidation with wet N2anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOxinterlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeOxin water-containing atmosphere.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用湿法NO氧化法和湿法n2退火法在Ge衬底上生长GeON栅介电介质。与干式NO氧化相比，湿式NO氧化可获得近乎完美的GeON介电介质，而GeOxinterlayer的生长可以忽略不计。结果表明，该方法制备的MOS电容器的界面态、氧化物电荷密度和栅极漏电流均大大降低。这应归因于高鑫含水大气的可水解特性。

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Suppressed Growth of Interlayer GeOxin Ge MOS Capacitors with Gate Dielectric Prepared in Wet NO Ambient

Wet NO oxidation with wet N2anneal is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeOxinterlayer and thus a near-perfect GeON dielectric can be obtained by the wet NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate leakage current. This should be attributed to the hydrolysable property of GeOxin water-containing atmosphere.

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2005 IEEE Conference on Electron Devices and Solid-State Circuits

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