电子-声子相互作用对六方氮化硼缺陷光谱性质的影响

Quantum Information and Measurement (QIM) V: Quantum Technologies Pub Date : 2019-04-04 DOI:10.1364/QIM.2019.S4A.2

O. Arı, V. Fırat, Nahit Polat, O. Cakir, S. Ateş

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引用次数: 1

摘要

我们提出了对六方氮化硼单一缺陷的温度依赖微pl研究。零声子线发射伴随着Stokes和反Stokes声子边带(≈6.5 meV)， Debye-Waller因子为0.59。

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Influence of Electron-Phonon Interactions on the Spectral Properties of Defects in Hexagonal Boron Nitride

We present temperature-dependent micro-PL studies on a single defect in hexagonal boron nitride. A zero-phonon line emission accompanied by Stokes and anti-Stokes phonon sidebands (≈ 6.5 meV) with a Debye-Waller factor of 0.59 is observed.

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Quantum Information and Measurement (QIM) V: Quantum Technologies

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