用于串行保护应用的4H-SiC高压限流装置的电气和电热2D模拟

Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435) Pub Date : 2000-08-15 DOI:10.1109/IPEMC.2000.885436

F. Nallet, A. Sénès, D. Planson, M. Locatelli, J. Chante, J.P. Taboy

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引用次数: 4

摘要

本文的主题是研究碳化硅在新型固态功率器件中的应用能力。研究了一种4H-SiC限流器件。器件结构为具有预成形N沟道的垂直功率MOSFET。利用ISE TCAD工具对其电热特性进行了仿真。估计了这种硅器件的效率，以便与SiC进行比较。本文还提出了在HSPICE模型电路中使用两个SiC器件进行全面仿真，以研究双向串行保护系统的能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

The subject of this paper is a study of the ability of silicon carbide to be used for new solid state power device applications. A 4H-SiC current limiting device is studied. The device structure is a vertical power MOSFET with a preformed N channel. Its electrothermal behavior is presented through simulations with ISE TCAD tools. The efficiency of such a silicon device is estimated for comparison with SiC. A full simulation with two SiC devices inside an HSPICE modeled circuit is also proposed to study the ability of a bi-directional serial protection system.

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Proceedings IPEMC 2000. Third International Power Electronics and Motion Control Conference (IEEE Cat. No.00EX435)

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