等离子体CVD法制备TEOS SiO/ sub2 /薄膜的击穿特性

Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93) Pub Date : 1993-10-17 DOI:10.1109/CEIDP.1993.378947

K. Ishii, T. Morita, D. Isshiki, Y. Ohki

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引用次数: 0

摘要

采用等离子体化学气相沉积(CVD)法制备了四乙氧基硅烷SiO/ sub2 /薄膜，并对薄膜的介电强度等性能进行了研究。TEOS-SiO/ sub2 /薄膜具有沉积温度低、质量高、台阶覆盖好等特点，已成为不可缺少的层间介电层。重点研究了1060 cm/sup -1/下Si-O-Si键的刻蚀速率和吸光度随沉积温度的变化规律，沉积温度对H/sub 2/O分子和Si-OH键含量的影响，沉积温度对介电强度的影响，以及沉积温度对7.6 eV光子在45 k下发出4.3 eV光致发光强度的影响。

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Breakdown characteristics of thin SiO/sub 2/ films deposited from TEOS using plasma CVD method

SiO/sub 2/ films were deposited from TEOS (tetraethoxysilane) using the plasma CVD (chemical vapor deposition) method, and some properties including the dielectric strength were studied. The TEOS-SiO/sub 2/ film features low deposition temperature, high quality, and good step-coverage, has become indispensable as an interlevel dielectric layer. Attention is given to the following: the etching rate and absorbance of Si-O-Si bondings at 1060 cm/sup -1/ as a function of the deposition temperature, the effect of the deposition temperature on the contents of H/sub 2/O molecules and Si-OH bondings, the effect of the deposition temperature on the dielectric strength and the effect of the deposition temperature on the intensity of 4.3 eV photoluminescence exited by 7.6 eV photons at 45 K.<>

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Proceedings of IEEE Conference on Electrical Insulation and Dielectric Phenomena - (CEIDP '93)

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