{"title":"关于线性双端口噪声测量方法的最新标准建议","authors":"G. Martines, M. Sannino","doi":"10.1109/CPEM.1994.333208","DOIUrl":null,"url":null,"abstract":"One of the most interesting topics for microwave community is the characterization of low-noise transistors. After so many years, the standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is proposed here as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.<<ETX>>","PeriodicalId":388647,"journal":{"name":"Proceedings of Conference on Precision Electromagnetic Measurements Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Proposal of up-to-date standards on methods of measuring noise in linear two-ports\",\"authors\":\"G. Martines, M. Sannino\",\"doi\":\"10.1109/CPEM.1994.333208\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"One of the most interesting topics for microwave community is the characterization of low-noise transistors. After so many years, the standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is proposed here as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.<<ETX>>\",\"PeriodicalId\":388647,\"journal\":{\"name\":\"Proceedings of Conference on Precision Electromagnetic Measurements Digest\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Conference on Precision Electromagnetic Measurements Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CPEM.1994.333208\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Conference on Precision Electromagnetic Measurements Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CPEM.1994.333208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Proposal of up-to-date standards on methods of measuring noise in linear two-ports
One of the most interesting topics for microwave community is the characterization of low-noise transistors. After so many years, the standards suggested by IEEE in 1960 are considered obsolete by the experimenters. A new methodology is proposed here as a standard. To support this proposal, an original measuring system for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters from noise figure measurements only is presented.<>
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