富勒烯薄膜夹层结构的电物理性质研究

A. Berdinsky, Y. Shevtsov, Y.A. Saranchin, S. Rubin, Y. Shubin, B. Ayupov, D. Fink, L. T. Chadderton, J. Lee
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摘要

本文报道了基于富勒烯薄膜的夹层结构技术及其在研究夹层样品光学和电导率性能方面的实验结果。采用蓝宝石[100]或硅的单晶作为衬底。夹层试样的结构为M/C/sub - 60/富勒烯膜/M (M=Cr,Pd,Ag,Al,Cu)。富勒烯薄膜厚度/spl μ m/0.2 ~ 1.0 /spl μ m。面积C/sub / 60/膜下顶触/spl /1厘米/sup / 2/。对样品进行了红外光谱、光谱光度、椭偏仪和XRD分析。测量了电导率的I-V特性,研究了电导率的温度依赖性。结果表明,Cr、Pd、Ag、Al、Cu等金属在富勒烯薄膜中容易渗透。样品显示出较大的电导率。银/C/亚60/结构和其他夹层结构表现出半导体导电性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The study on electro-physical properties of sandwich structure based on fullerene films
We report the technology of sandwich structure based on fullerene films and experimental results in research of optical and conductivity properties of sandwich samples. The single-crystal of sapphire [100] or silicon was used as a substrate. The sandwich specimens were based on structure M/C/sub 60/ fullerene film/M (M=Cr,Pd,Ag,Al,Cu). The thickness of fullerene films /spl sim/0.2-1.0 /spl mu/m. The area of C/sub 60/ film under the top contact /spl sim/1 cm/sup 2/. The specimens have been investigated in IR-spectroscopy, spectra-photometry, ellipsometry and XRD. The measurements of I-V characteristics and research in temperature dependence of conductivity were made as well. It was shown that metals as Cr, Pd, Ag, Al, Cu penetrates easy in fullerene film. It appears that specimens show the large value of conductivity. Silver/C/sub 60/ structure and other sandwich structures show semiconductor behaviour of conductivity.
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