三维堆叠型大规模集成电路的晶圆薄化和双面凸化技术的发展

M. Sunohara, Tomonori Fujii, M. Hoshino, H. Yonemura, M. Tomisaka, Kenji Takahashi
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引用次数: 16

摘要

三维芯片堆叠技术作为新一代封装技术得到了广泛的发展。该技术包括彻底的电极制造、晶圆减薄、晶圆背面处理、测试和芯片堆叠。晶圆减薄和晶圆背面处理是其中的重要技术,因为这些技术可以适应小而薄的外形,实现薄芯片堆叠,并提高堆叠模块的电气和机械可靠性。本文介绍了硅片减薄和硅片背面工艺的新技术,包括绝缘膜的形成和减薄硅片背面的碰撞。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Development of wafer thinning and double-sided bumping technologies for the three-dimensional stacked LSI
The three-dimensional (3D) chip stacking technology has been developed extensively recently for the next generation packaging technology. The technology includes thorough electrode fabrication, wafer thinning, wafer backside processing, testing, and chip stacking. Wafer thinning and wafer backside processing are important technologies among them, because these technologies accommodate small and thin form factor, enable thin chip stacking, and enhances electrical and mechanical reliability of the stacked module. In this paper, novel technologies of wafer thinning and wafer backside processes that include insulation film formation and bumping on the backside of the thinned wafer are described.
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