GMMT GaAs HBT制程高频电路设计概述

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493711

M. McCullagh, J. Moult, R. Davies, B. Wallis, S. Wadsworth

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引用次数: 1

摘要

GMMT开发了一种新的GaAs HBT工艺，用于实现高性能微波和光学子系统。该工艺有两个版本:B20用于小信号和数字应用，B20P用于微波功率应用。1/2静态分频器已被设计在过程中切换频率高达17ghz。工作在9至12 GHz带宽上的x波段功率mmic输出功率为2w，功率增加效率为30%，相关增益为14db。优异的功率性能，低1/f噪声和宽带运行的独特特性将确保GaAs hbt作为满足无线和光学系统不断增长的需求的关键使能技术。

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An overview of high frequency circuit design on the GMMT GaAs HBT process

A new GaAs HBT process has been developed at GMMT for the implementation of high performance microwave and optical sub-systems. Two versions of the process exist: B20 for small signal and digital applications and B20P for microwave power applications. 1/2 static frequency dividers have been designed on the process which toggle at frequencies up to 17 GHz. X-band power MMICs operating over a bandwidth of 9 to 12 GHz deliver an output power of 2 W with a power added efficiency of 30% and associated gain of 14 dB. The unique characteristics of excellent power performance, low 1/f noise and wideband operation will ensure that GaAs HBTs act as a key enabling technology for meeting the ever increasing demands of wireless and optical systems.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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