采用高压0.25µm CMOS技术的磁共振系统收发芯片设计

H. Hsu, C. Chien, Dien-Ying Wu
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引用次数: 1

摘要

设计了一种适用于可穿戴设备的无线电力传输收发芯片。该芯片强制VDD为24V,工作在11MHz时钟速率下。为了提高效率,在芯片设计中采用了无重叠时钟技术。为了验证所提出的电路,该芯片采用台积电高压0.25μm CMOS技术实现。测试板是为测试集成电路芯片而设计的。驱动芯片从直流电源耗散23.48W,向22Ω负载输出22.73W的功率。因此,集成电路芯片效率为92.3%。设计了用于测试集成电路芯片的磁共振线圈。测量S21峰值发生在谐振线圈的5.5MHz处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transceiver chip design in high voltage 0.25µm CMOS technology for magnetic resonance system
A transceiver IC chip of wireless power transfer is design for wearable device application. The chip forced a VDD of 24V is operated at 11MHz clock rate. The non-overlap clock technique is adopted in chip design for improving the efficiency. To verify the proposed circuit, the chip is implemented by TSMC High Voltage 0.25μm CMOS technology. The testing board is design to measure the IC chip. The driver chip dissipates 23.48W from DC source and deliver a power of 22.73W to 22Ω load. Therefore, the IC chip efficiency is 92.3%. The magnetic resonance coil is design to test the IC chip. The measurement S21 peak is occurred at 5.5MHz in resonance coil.
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