Jong-Lam Lee, J. Mun, Hae-cheon Kim, Jae Jin Lee, Hyung‐Moo Park, S. Park
{"title":"2.3 V工作GaAs功率MESFET，功率增加效率68%","authors":"Jong-Lam Lee, J. Mun, Hae-cheon Kim, Jae Jin Lee, Hyung‐Moo Park, S. Park","doi":"10.1109/GAAS.1994.636948","DOIUrl":null,"url":null,"abstract":"A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power-added efficiency. A third-order intercept point was evaluated to be 50.7-dBm. A Linearity Figure-of-Merit of 55.6 was recorded for 21-mm-wide FET.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"2.3 V operation GaAs power MESFET with 68% power-added efficiency\",\"authors\":\"Jong-Lam Lee, J. Mun, Hae-cheon Kim, Jae Jin Lee, Hyung‐Moo Park, S. Park\",\"doi\":\"10.1109/GAAS.1994.636948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power-added efficiency. A third-order intercept point was evaluated to be 50.7-dBm. A Linearity Figure-of-Merit of 55.6 was recorded for 21-mm-wide FET.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
2.3 V operation GaAs power MESFET with 68% power-added efficiency
A state-of-the-art GaAs power MESFET operating at a drain bias of 2.3 V has been developed using the low-high doped channel structure. The device has 0.8-/spl mu/m gate length and 21-mm gate width. The power performance tested at a 2.3 V drain bias under 900 MHz operation frequency was output power of 31.3-dBm with 11.3-dB gain and 69-percent power-added efficiency. A third-order intercept point was evaluated to be 50.7-dBm. A Linearity Figure-of-Merit of 55.6 was recorded for 21-mm-wide FET.
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