igbt的低温研究与建模

IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03. Pub Date : 2003-06-15 DOI:10.1109/PESC.2003.1217742

A. Caiafa, X. Wang, J. Hudgins, E. Santi, P. Palmer

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引用次数: 30

摘要

在-260至25/spl℃的温度范围内，研究了沟栅igbt的开关特性(通断)和正向导通降。先前开发的基于物理的模型被修改为在低结温下纳入适当的物理行为。将模型结果与实验波形进行了比较，并讨论了差异。

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Cryogenic study and modeling of IGBTs

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25/spl deg/C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed.

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来源期刊

IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03.

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