M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere
{"title":"LP-MOCVD GaInAs/InP异质结构界面缺陷与电学性能的相关性，应用于高性能1.67 /spl mu/m GaInAs/InP PiN光电二极管","authors":"M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere","doi":"10.1109/ICIPRM.1993.380692","DOIUrl":null,"url":null,"abstract":"The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 /spl mu/m GaInAs/InP PiN photodiodes\",\"authors\":\"M. di Forte-Poisson, C. Brylinski, C. Herbeaux, Y. Androussi, A. Lefebvre, J. di Persio, E. Vassilakis, F. Herrbach, C. Carriere\",\"doi\":\"10.1109/ICIPRM.1993.380692\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380692\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380692","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Correlation between interfacial defects and electrical properties of LP-MOCVD GaInAs/InP heterostructures, application to high performance 1.67 /spl mu/m GaInAs/InP PiN photodiodes
The authors report on low pressure-metal-organic chemical vapor deposition (LP-MOCVD) growth and the properties of GaInAs/InP double heterostructures grown on InP substrate. Some critical points for the LP-MOCVD process are the quality of the sources and appropriate growth conditions. These critical parameters were investigated together with the effect of different switching sequences from InP to GaInAs on the crystallographic and electrical properties of the direct InP/GaInAs interface. The relationship between crystallographic and electrical properties of GaInAs/InP interfaces is demonstrated. In addition a good correlation between such properties and performance of GaInAs/InP PiN photodiodes was observed.<>
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