GeSb2Te4相变薄膜的短波光存储性能

L. Men, F. Jiang, Chao-Te Liu, Huiyong Liu, F. Gan
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引用次数: 3

摘要

研究了真空rf溅射法制备GeSb2Te4薄膜在400 ~ 830nm波长范围内的光学性能。在400 ~ 600 nm波长范围内观察到较大的吸收,这与氩激光的波长相匹配。GeSb2Te4薄膜的光存储特性清楚地表明,在低功率氩激光(514.5 nm)照射下可以获得较大的反射率对比度。擦除对比度相对较低,但可以通过多层膜匹配来提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films
The optical properties of GeSb2Te4 thin films prepared by vacuum RF-sputtering method at the wavelength region of 400 - 830 nm were studied. A comparatively large absorption was observed in the wavelength range 400 - 600 nm, which matches with the wavelengths of Argon laser. The optical storage characterizations of GeSb2Te4 thin film demonstrate clearly that larger reflectivity contrast can be obtained at lower power Argon laser (514.5 nm) irradiation. The erasing contrast is relatively lower but can be improved by multi-layer films match.
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