High temperature Hall effect measurements of semi-insulating 4H-SiC substrates

The paper presents the temperature dependent measurements of the Hall effect along with the resistivity for a variety of high purity and vanadium doped SI 4H-SiC (semi-insulating SiC) samples at temperatures up to 850 /spl deg/C. Resistivity measurements after annealing the samples at temperatures up to 1800 /spl deg/C are reported. The Hall effect experiments on samples of all three types indicate that the conduction is n-type with a variety of activation energies very close to those for the activation energy. The resistivity and Hall effect coefficient data were analysed using simplified two-carrier models to investigate the possibility of mixed conduction due to intrinsic activation of both electron and holes.