具有宽带特性和宽动态范围的HEMT单片双通道衰减器

1988 18th European Microwave Conference Pub Date : 1988-10-01 DOI:10.1109/EUMA.1988.333940

J. Cazaux, D. Pavlidis, G. Ng, M. Tutt

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引用次数: 7

摘要

双通道HEMT用作桥式t衰减器中的可变电阻元件，具有宽带特性(0.5-12GHz)和宽动态范围(12-16dB)。在异质结方法的帮助下，可以获得较小的插入损耗(最小2.8dB)，从而产生比MESFET技术更小的ON-channel电阻。

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A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide Dynamic Range

Double Channel HEMT's are used as variable resistor elements in a bridged-T attenuator with broadband characteristics (0.5-12GHz), and wide dynamic range (12-16dB). A small insertion loss (2.8dB minimum) is obtained with the help of the heterojunction approach which results in smaller ON-channel resistances than MESFET technology.

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1988 18th European Microwave Conference

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