采用金属有机化学气相沉积法在低温下制备了1.28 /spl μ m的AlGaAs包层InAs/GaAs量子点激光器

2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest. Pub Date : 2004-09-21 DOI:10.1109/ISLC.2004.1382752

J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa

{"title":"采用金属有机化学气相沉积法在低温下制备了1.28 /spl μ m的AlGaAs包层InAs/GaAs量子点激光器","authors":"J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa","doi":"10.1109/ISLC.2004.1382752","DOIUrl":null,"url":null,"abstract":"This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition\",\"authors\":\"J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa\",\"doi\":\"10.1109/ISLC.2004.1382752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了MOCVD生长的AlGaAs包层自组装InAs量子点激光器的长波长激光。通过在低温下生长Al/sub 0.4/Ga/sub 0.6/As上层熔覆层，抑制了InAs量子点生长后退火的影响，在室温下实现了堆叠InAs/GaAs量子点激光器1.28 /spl mu/m的连续波激光。

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1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.

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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.

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