亚微米mosfet的反向短沟道效应

Southcon/96 Conference Record Pub Date : 1996-06-25 DOI:10.1109/SOUTHC.1996.535091

R. Narayanan, Z. Latif, A. Ortiz-Conde, J. Liou, L. Golovanova, W. Wong, F. Garcia Sanchez

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引用次数: 1

摘要

利用二维仿真结果验证了基于通道掺杂非均匀横向分布的反向短通道效应模型。仿真结果与实验测量结果一致，表明阈值电压随掩模通道长度的变化呈现最大值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the reverse short-channel effects of submicron MOSFETs

A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel dopant, is verified with two-dimensional simulation results. The simulated results, in agreements with experimental measurements, reveal that the magnitude of the threshold voltage versus the mask channel length present a maximum value.

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Southcon/96 Conference Record

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