针平面几何下硅凝胶的击穿场

M. T. Do, J. Augé, O. Lesaint
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引用次数: 6

摘要

硅凝胶用于IGBT模块中,以隔离由电流驱动的键合,并承受约几千伏的高压。凝胶避免了模块内部的局部放电,这将导致其失效,甚至在其破坏。本研究的目的是研究硅凝胶在交流、直流和冲击电压下的针面几何击穿场(尖端半径的变化)。对均匀场和发散场下的结果进行了比较。不可能定义适用于凝胶的最大场的单一值。正如在液体中一样,当电极尺寸增大时,电场也会减小。然而,通过比较凝胶和硅油的行为,低尖端半径存在差异。小表面注入的空间电荷似乎参与了击穿场的增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Breakdown field in silicone gel under needle-plane geometry
The silicone gel is used in IGBT modules to isolate bondings driven by currents and submitted to high voltage of about several kV. The gel avoids the partial discharge inside the module that would lead to its failure even on its destruction. The goal of this study is to investigate the breakdown field of silicone gel in needle-plane geometry (with varying of the tip radius) under ac, dc and impulse voltages. The comparison of the results obtained under uniform field and divergent field was done. It is not possible to define a single value of the maximum field applicable to the gel. As in liquids, the field decreases when the size of electrodes is increased. However, by comparing the behavior of the gel and the silicone oil, there exists a difference for low tip radius. The space charge injected for small surfaces seems participate for increasing the breakdown field.
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