A. Nelson, Julie R. Hu, J. Kaitila, R. Ruby, B. Otis
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引用次数: 35
摘要
我们提出了一个22µW, 2.0GHz的FBAR振荡器，这是迄今为止报道的该类型ghz范围振荡器的最低功率。通过与高Rp FBAR谐振器和弱正向偏置体连接的共同设计，实现了低功耗。为了进行比较，制作了一个具有标准本体连接的振荡器。该芯片采用0.18 μ m CMOS工艺制造。弱正向偏置体导致功耗降低41%。在100kHz偏移时，测量到的相位噪声为- 121dBc/Hz。
We present a 22µW, 2.0GHz FBAR oscillator - the lowest power reported to date for a GHz-range oscillator of this type. Low power consumption is achieved through co-design with a high Rp FBAR resonator and a weakly-forward biased bulk connection. An oscillator with a standard bulk connection was fabricated for comparison. The chip was fabricated in a 0.18µm CMOS process. The weakly-forward biased bulk led to a 41% reduction in power dissipation. The measured phase noise is −121dBc/Hz at a 100kHz offset.
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