一种具有晶体In-Ga-Zn氧化场效应晶体管的16电平电池非易失性存储器

2015 IEEE International Memory Workshop (IMW) Pub Date : 2015-05-17 DOI:10.1109/IMW.2015.7150266

T. Matsuzaki, T. Onuki, S. Nagatsuka, H. Inoue, T. Ishizu, Y. Ieda, Naoto Yamade, H. Miyairi, M. Sakakura, Y. Shionoiri, K. Kato, T. Okuda, J. Koyama, Yoshitaka Yamamoto, S. Yamazaki

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引用次数: 2

摘要

使用非易失性氧化物半导体RAM测试芯片，包括c轴排列的晶体In-Ga-Zn氧化物场效应管，演示了16电平电池。由电压跟随器组成的读电路输出最大分布为37mv的读电压。单个电压从动器的最大读电压分布为25.3 mV。测试芯片的写入时间为200ns。

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A 16-Level-Cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET

A 16-level cell is demonstrated using a test chip of nonvolatile oxide semiconductor RAM comprising c-axis aligned crystalline In-Ga-Zn oxide FETs. A read circuit composed of voltage followers outputs a read voltage with a maximum distribution of 37 mV. A single voltage follower has a maximum distribution of the read voltage of 25.3 mV. A 200 ns write time of the test chip is demonstrated.

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2015 IEEE International Memory Workshop (IMW)

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