宽头t栅AlGaAs/InGaAs hemt的极低噪声特性

1995 53rd Annual Device Research Conference Digest Pub Date : 1995-06-19 DOI:10.1109/DRC.1995.496239

Jin-Hee Lee, H. Yoon, Chul-Soon Park, Hyung‐Moo Park

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引用次数: 3

摘要

寄生栅电阻是决定hemt噪声性能的重要因素之一。为了减小栅极电阻，需要采用大截面积的t形栅极。在这项研究中，我们报道了一种新开发的宽头t型栅极的AlGaAs/InGaAs伪晶HEMT，采用剂量分裂电子束光刻和选择性栅极凹刻制备。

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Very low noise characteristics of AlGaAs/InGaAs HEMTs with wide head T-gate

The parasitic gate resistance is one of the most important factors in determining the noise performance of HEMTs. In order to reduce the gate resistance, T-shaped gates with large cross-sectional area are required. In this study, we report a AlGaAs/InGaAs pseudomorphic HEMT with a newly developed wide head T-gate fabricated by using dose split electron beam lithography and selective gate recess etching.

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1995 53rd Annual Device Research Conference Digest

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