使用新的估计器从低场和室温测量中预测T/sub / BD/

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852832

A. Ghetti, J. Bude, G. Weber

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引用次数: 12

摘要

我们提出了一种新的方法来预测氧化击穿从测量在低电压和室温。该方法基于隧道进入接口状态(TEDit)。我们展示了TEDit与崩溃相关。然后我们利用这种相关性来预测氧化物的寿命。

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T/sub BD/ prediction from measurements at low field and room temperature using a new estimator

We present a new method to predict oxide breakdown from measurements at low voltage and room temperature. The method is based on tunneling into interface states (TEDit). We show that TEDit correlates to breakdown. Then we exploit this correlation to predict oxide lifetime.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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