用于UMTS/WCDMA应用的GaN HEMT f类放大器

2008 IEEE International RF and Microwave Conference Pub Date : 2008-12-01 DOI:10.1109/RFM.2008.4897420

F. N. Khan, F. Mohammadi, M. Yagoub

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引用次数: 6

摘要

在这项工作中，作者提出了一种高效的GaN HEMT f类放大器，设计用于使用宽带码分多址(UMTS/WCDMA)的通用移动电信系统。该放大器峰值PAE为76%，输出功率为10.5 W。并对f类和反f类进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A GaN HEMT Class-F amplifier for UMTS/WCDMA applications

In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.

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2008 IEEE International RF and Microwave Conference

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