SiGe nfinet中声子和合金散射限制迁移率的原子模拟

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2014-10-23 DOI:10.1109/SISPAD.2014.6931612

Hong-hyun Park, Yang Lu, W. Choi, Young-tae Kim, Keun-Ho Lee, Youngkwan Park

{"title":"SiGe nfinet中声子和合金散射限制迁移率的原子模拟","authors":"Hong-hyun Park, Yang Lu, W. Choi, Young-tae Kim, Keun-Ho Lee, Youngkwan Park","doi":"10.1109/SISPAD.2014.6931612","DOIUrl":null,"url":null,"abstract":"This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Atomistic simulations of phonon- and alloy-scattering-limited mobility in SiGe nFinFETs\",\"authors\":\"Hong-hyun Park, Yang Lu, W. Choi, Young-tae Kim, Keun-Ho Lee, Youngkwan Park\",\"doi\":\"10.1109/SISPAD.2014.6931612\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931612\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文给出了sige沟道nfinfet中电子迁移率性能极限的原子模拟结果，其中声子和合金散射限制迁移率基于经验紧密结合和价态力场方法计算，没有任何迁移率拟合参数。研究了翅片厚度、侧壁取向、SiGe合金摩尔分数、外加应力对低场电子迁移率的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Atomistic simulations of phonon- and alloy-scattering-limited mobility in SiGe nFinFETs

This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.

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2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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