扫描探针辅助CVD生长石墨烯在Ge(l00)上的局部氧化纳米光刻

M. Pea, De Seta, L. Di Gaspare, V. Mišeikis, C. Coletti, A. Notargiacomo
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引用次数: 1

摘要

我们报道了扫描探针辅助局部氧化技术在CVD技术直接生长在Ge(100)衬底上的石墨烯层上获得的纳米级厚图案的形态学研究。通过在原子力显微镜探针上施加负电压,同时在样品表面平移探针尖端,可以产生突出的丘和线。介绍了所制备的局部氧化物的主要特征,以及与在Ge或Si样品上进行的类似实验的不同之处。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00)
We report on the morphological investigation of nanoscale thick patterns obtained by the scanning probe assisted local oxidation technique on graphene layers grown directly on Ge (100) substrates using CVD technique. Protruding mounds and lines are produced by applying a negative voltage to the atomic force microscope probe while translating the probe tip across the sample surface. The main features of the local oxide produced and the differences with respect to similar experiments conducted on Ge or Si samples are presented.
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