一种针对高频应用的新型低轮廓功率模块

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509507

S. Shinohara, T. Suzuki, K. Tanino, H. Kobayashi, Y. Hasegawa

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引用次数: 3

摘要

介绍了一种用于高频应用的新型8mm型功率模块。该模块具有低于4 nH的低电感和0.234/spl度/W/cm/sup 2/的低热阻，通过使用独特的双层和终端集成AlN衬底，缩短了组装时间。本模块中的并联mosfet演示了在10mhz下500v - 50a的开关。

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A novel low-profile power module aimed at high-frequency applications

A new 8 mm-profile power module for high-frequency applications is described. This module exhibits low inductances of less than 4 nH for the terminals and a low thermal resistance of 0.234/spl deg/W/cm/sup 2/, providing less assembly time by using a unique double-layered and terminal-integrated AlN substrate. Paralleled MOSFETs in this module demonstrate 500 V-50 A switching at 10 MHz.

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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