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引用次数: 16
摘要
由于成本、面积和功耗的限制,嵌入式计算系统比普通PC或工作站系统使用更少的缓存空间和更少的内存层次。因此,它们特别依赖于底层动态RAM (DRAM)主存储系统的性能。因此,本文研究了两种最新的DRAM架构,即广泛使用的同步DRAM (sdram)和下一代称为直接Rambus DRAM (RDRAM)的存储器。通过对当前嵌入式内存控制器进行简单的增强,利用最新内存接口的特性可以实现性能提升。通过对DRAM体系结构和存储器控制器的模拟,以及运行各种应用程序的无序问题、超大规模cpu模型,研究了存储器访问方案的不同方法。模拟得出以下结果:使用rdram代替sdram可将系统性能提高三分之一,而利用dram的多银行结构比流水线内存传输更能提高性能。
The impact of recent DRAM architectures on embedded systems performance
Embedded computing systems utilize less cache space and fewer memory hierarchy levels than ordinary PC or workstation systems due to cost, area and power dissipation restrictions. Consequently, they particularly depend on the performance of the underlying dynamic RAM (DRAM) main-memory system. Hence, two recent DRAM architectures, the widely-used synchronous DRAMs (SDRAMs) and the next-generation memory called the Direct Rambus DRAM (RDRAM), are investigated in this paper. Performance gains are revealed that can be achieved by exploiting features of recent memory interfaces with simple enhancements of current embedded memory controllers. Different approaches for memory access schemes are investigated by simulation of the DRAM architectures and the memory controller, together with an out-of-order-issue, superscalar-CPU model running various applications. The simulations lead to the following results: using RDRAMs instead of SDRAMs improves the performance of the system by up to one third, while exploiting the multibank structure of DRAMs improves the performance more than pipelining memory transfers does.