超过100 GHz的太赫兹通信集成电路:我们做到了吗?

K. Sengupta
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引用次数: 18

摘要

利用毫米波频率的5G范式的发展引起了人们对100 GHz以上(高达1000 GHz)频谱频段的兴趣,用于无线通信和传感。在过去的十年中,在集成太赫兹技术领域的研究出现了显著的高潮,这些技术的重点是使太赫兹系统能够在室温下运行,并可大规模部署。在这方面,硅基集成电路技术可以提供一个可扩展的平台。其优势包括从太赫兹前端到后端数字信号处理的集成水平,以及利用规模经济的高产量和低成本。这种基于硅的系统在毫米波姊妹频段(28/38/60/77 GHz)中的影响已经在汽车雷达中出现,并开始在5G及以后的应用中出现。问题是,这一成功是否可以转化为100千兆赫以上的技术,并扩展到1太赫兹,用于短距离到远程通信链路。硅并不是该领域唯一的竞争者。从集成电路(CMOS, SiGe到III-V)到光子学和其他技术的集成技术领域,目前尚不清楚如何划分蛋糕。本文将重点介绍硅基太赫兹系统的一些最新进展,以及在这一未知频谱中跨越所有抽象级别的未来挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integrated Circuits for Terahertz Communication Beyond 100 GHz: Are We There Yet?
The evolution of the 5G paradigm exploiting millimeter-wave frequencies have raised interest in the spectral bands above 100 GHz ranging up to 1000 GHz for wireless communication and sensing. In the last decade, there has been a significant upsurge of research in the field of integrated THz technology that has focused on enabling efficient and compact Terahertz systems operable at room temperature and deployable at large scales. In this, silicon-based integrated circuit technology can potentially provide a scalable platform. The benefits span from its level of integration right from the THz front-end to the back-end digital signal processing to high yield and low cost exploiting economies of scale. The impact of such silicon-based systems in the sister millimeter-wave bands (28/38/60/77 GHz) have already been seen in automotive radars and are starting to surface for 5G applications and beyond. The question is if this success can be translated to technologies beyond 100 GHz and extending up to 1 THz for short-range to long-range communication links. Silicon is not the only contender in the space. In the landscape of integrated technologies ranging from ICs (CMOS, SiGe to III-V) to photonics and other technologies, it is not clear how the pie be divided. This paper will focus on some of the latest advances in silicon-based THz systems and future challenges that span across all levels of abstraction in this uncharted frequency spectrum.
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