{"title":"黑硅作为近红外光热转换吸收剂","authors":"S. Cheng, Bin Cai, Yiming Zhu","doi":"10.1109/OECC.2015.7340311","DOIUrl":null,"url":null,"abstract":"By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.","PeriodicalId":312790,"journal":{"name":"2015 Opto-Electronics and Communications Conference (OECC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Black silicon as absorber for near-infrared photo-thermal conversion\",\"authors\":\"S. Cheng, Bin Cai, Yiming Zhu\",\"doi\":\"10.1109/OECC.2015.7340311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.\",\"PeriodicalId\":312790,\"journal\":{\"name\":\"2015 Opto-Electronics and Communications Conference (OECC)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Opto-Electronics and Communications Conference (OECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OECC.2015.7340311\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Opto-Electronics and Communications Conference (OECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OECC.2015.7340311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Black silicon as absorber for near-infrared photo-thermal conversion
By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.