通过耗尽捕获电荷的红外探测

D. Coon, S. Gunapala, R. Karunasiri, H. Muehlhoff
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引用次数: 1

摘要

我们描述了一种红外探测模式,该模式涉及在低温下存储在半导体局域态的电荷耗尽。这种模式具有非常长的集成时间(长达12小时或更长时间)和超出通常的长波长截止的场增强响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
IR detection by depletion of trapped charge
We describe a mode of infrared detection which involves the depletion of charge stored in localized states in semiconductors at low temperatures. This mode features very long integration times (up to 12 hours or more) and field-enhanced response beyond the usual long wavelength cutoff.
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