用于冷场效应晶体管混频器设计的精确非线性电子器件建模

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772287

V. D. Giacomo, A. Santarelli, A. Raffo, P. Traverso, D. Schreurs, J. Lonac, D. Resca, G. Vannini, F. Filicori, M. Pagani

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引用次数: 4

摘要

本文采用非线性经验模型来模拟GaAs PHEMT在电阻式混频器应用框架下的冷场效应晶体管行为。该模型是纯粹的数学和技术独立的，可以在感兴趣的设备工作区域中进行适当的识别，并通过利用基于LS-VNA的测量设置在大信号条件下进行验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design

A nonlinear empirical model is here adopted to model the cold-FET behaviour of a GaAs PHEMT, in the framework of a resistive mixer application. The model, purely mathematical and technology independent, is suitably identified in the device operative region of interest and is validated in large-signal conditions by exploiting a measurements setup based on LS-VNA.

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2008 European Microwave Integrated Circuit Conference

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