{"title":"高效超薄c-Si太阳能电池的光电方法","authors":"A. Ingenito, O. Isabella, M. Zeman","doi":"10.1109/ASDAM.2014.6998703","DOIUrl":null,"url":null,"abstract":"The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99% of 4n2 classical absorption limit for wafer thinner than 35 μm. Such excellent optical performance does not reflect optimal electronic properties due to high recombination rate of the nano-textured surface. Therefore, we propose a passivation method involving both wet etching and high quality passivation coating of the nano-textured surface. For wet etching time longer than 30 s recombination rate of the nano-textured surface reduced more than three time with respect to the un-etched one while keeping the averaged reflectance below 2% (between 300 and 1050 nm). Electrical simulations based on such findings indicate that for wafer thinner than 35 μm conversion efficiency higher than 25% can be achieved.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells\",\"authors\":\"A. Ingenito, O. Isabella, M. Zeman\",\"doi\":\"10.1109/ASDAM.2014.6998703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99% of 4n2 classical absorption limit for wafer thinner than 35 μm. Such excellent optical performance does not reflect optimal electronic properties due to high recombination rate of the nano-textured surface. Therefore, we propose a passivation method involving both wet etching and high quality passivation coating of the nano-textured surface. For wet etching time longer than 30 s recombination rate of the nano-textured surface reduced more than three time with respect to the un-etched one while keeping the averaged reflectance below 2% (between 300 and 1050 nm). Electrical simulations based on such findings indicate that for wafer thinner than 35 μm conversion efficiency higher than 25% can be achieved.\",\"PeriodicalId\":313866,\"journal\":{\"name\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2014.6998703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells
The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99% of 4n2 classical absorption limit for wafer thinner than 35 μm. Such excellent optical performance does not reflect optimal electronic properties due to high recombination rate of the nano-textured surface. Therefore, we propose a passivation method involving both wet etching and high quality passivation coating of the nano-textured surface. For wet etching time longer than 30 s recombination rate of the nano-textured surface reduced more than three time with respect to the un-etched one while keeping the averaged reflectance below 2% (between 300 and 1050 nm). Electrical simulations based on such findings indicate that for wafer thinner than 35 μm conversion efficiency higher than 25% can be achieved.