N. Sakimura, R. Nebashi, H. Honjo, S. Saito, Y. Kato, T. Sugibayashi
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引用次数: 5
摘要
采用0.15 μ m CMOS工艺和新开发的MRAM工艺开发了500 mhz MRAM宏。该宏设计使用20.17-mum2 5晶体管2磁隧道结(5T2MTJ)单元，具有用于写入和读取的单独端口。采用分层划分读位线(RBL)和高预电荷传感方案，获得了小于2 ns的访问时间。在已报道的mram中，其运行速度是最高的。在soc中，这个MRAM宏可以与更有效的基于2timtj细胞的MRAM宏共存。
A 500-MHz MRAM macro is developed using a 0.15-mum CMOS process and a newly developed MRAM process. The macro is designed using a 20.17-mum2 5-transistor 2-magnetic tunnel junction (5T2MTJ) cell that has individual ports for writing and reading. An access time of less than 2 ns was obtained by employing a hierarchically-divided read bit line (RBL) and a high pre-charge sensing scheme. The operation speed is the highest among MRAMs that have been reported. This MRAM macro can coexist with the more area-effective 2TIMTJ-cell-based MRAM macro in SoCs.
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