A. Rosen, P. Stabile, J. McGinn, C. Wu, C. Magee, W. Landford
{"title":"硅单片毫米波源","authors":"A. Rosen, P. Stabile, J. McGinn, C. Wu, C. Magee, W. Landford","doi":"10.1109/EUMA.1983.333234","DOIUrl":null,"url":null,"abstract":"We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometry (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra -thin, reproducible wafers, and are currently being used in the development of silicon hybrid and monolithic integrated millimeter-wave sources.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Silicon Monolithic Millimeter Wave Sources\",\"authors\":\"A. Rosen, P. Stabile, J. McGinn, C. Wu, C. Magee, W. Landford\",\"doi\":\"10.1109/EUMA.1983.333234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometry (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra -thin, reproducible wafers, and are currently being used in the development of silicon hybrid and monolithic integrated millimeter-wave sources.\",\"PeriodicalId\":105436,\"journal\":{\"name\":\"1983 13th European Microwave Conference\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1983-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1983 13th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1983.333234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1983 13th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1983.333234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometry (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra -thin, reproducible wafers, and are currently being used in the development of silicon hybrid and monolithic integrated millimeter-wave sources.
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