基于三维动态忆阻阵列的高面积效率三维油藏计算(5.12 TOPS/mm2

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Pub Date : 2022-06-12 DOI:10.1109/vlsitechnologyandcir46769.2022.9830310

Wenxuan Sun, Woyu Zhang, Jie Yu, Yi Li, Zeyu Guo, Jinru Lai, Danian Dong, Xu Zheng, Fei Wang, Shaoyang Fan, Xiaoxin Xu, Dashan Shang, Meilin Liu

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引用次数: 2

摘要

在这项工作中，我们利用动态忆阻器的I-V非线性和短期记忆在4层垂直阵列中实现了三维储层计算。并联忆阻器结构改善了动态储层的周期变化。通过输入策略设计，提高了储层空间的维数。经软硬件协同优化后，三维RC系统具有较高的识别精度(90%)、低能耗(~0.78 pJ /运算)和高面积效率(5.12 TOPS/mm2)。

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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of the dynamic reservoir is improved by parallel memristor configuration. The dimensionality of the reservoir space is increased by input strategy design. After the hardware-software co-optimization, the proposed 3D RC system exhibits high recognition accuracy (90%), low energy consumption (~0.78 pJ /operation), and high area efficiency (5.12 TOPS/mm2).

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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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