{"title":"一种采用功率组合技术的集成CMOS高功率放大器","authors":"Y. Wang, Jiann-Shiun Yuan","doi":"10.1109/SECON.2012.6196999","DOIUrl":null,"url":null,"abstract":"A fully integrated power amplifier using the transformer type power combiner is presented. The power amplifier contains two transformers to lead to high output power with small chip size. The parallel combining transformer is realized with 1:1 turn ratio. The transformers are incorporated into the design of power amplifier in a standard 0.18 μm CMOS technology. The power amplifier with built-in power combiner delivers 23.4 dBm of output power at 5.2 GHz with 3.3 V supply voltage.","PeriodicalId":187091,"journal":{"name":"2012 Proceedings of IEEE Southeastcon","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An integrated CMOS high power amplifier using power combining technique\",\"authors\":\"Y. Wang, Jiann-Shiun Yuan\",\"doi\":\"10.1109/SECON.2012.6196999\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully integrated power amplifier using the transformer type power combiner is presented. The power amplifier contains two transformers to lead to high output power with small chip size. The parallel combining transformer is realized with 1:1 turn ratio. The transformers are incorporated into the design of power amplifier in a standard 0.18 μm CMOS technology. The power amplifier with built-in power combiner delivers 23.4 dBm of output power at 5.2 GHz with 3.3 V supply voltage.\",\"PeriodicalId\":187091,\"journal\":{\"name\":\"2012 Proceedings of IEEE Southeastcon\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Proceedings of IEEE Southeastcon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.2012.6196999\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Proceedings of IEEE Southeastcon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.2012.6196999","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An integrated CMOS high power amplifier using power combining technique
A fully integrated power amplifier using the transformer type power combiner is presented. The power amplifier contains two transformers to lead to high output power with small chip size. The parallel combining transformer is realized with 1:1 turn ratio. The transformers are incorporated into the design of power amplifier in a standard 0.18 μm CMOS technology. The power amplifier with built-in power combiner delivers 23.4 dBm of output power at 5.2 GHz with 3.3 V supply voltage.
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