CMOS肖特基二极管微波功率探测器的制造、SPICE建模及应用

Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06) Pub Date : 2006-01-17 DOI:10.1109/DELTA.2006.22

W. Jeon, J. Melngailis, R. Newcomb

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引用次数: 4

摘要

采用0.35/spl mu/ CMOS工艺制备了具有不同接触面积和几何形状的CMOS肖特基二极管。制备的二极管在直流和射频直接注入下进行了测试。基于实测结果，提出了CMOS肖特基二极管SPICE模型并进行了仿真。提出的SPICE模型用于设计电荷泵电路和低压参考电路。

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CMOS Schottky diode microwave power detector fabrication, SPICE modeling, and applications

CMOS Schottky diodes with various contact areas and geometries were fabricated through 0.35/spl mu/ CMOS process. Fabricated diodes were tested under DC and RF direct injection. Based on the measured result, a CMOS Schottky diode SPICE model is suggested and simulated. The suggested SPICE model is used for designing charge pump circuits and a low-voltage reference circuit.

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Third IEEE International Workshop on Electronic Design, Test and Applications (DELTA'06)

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