{"title":"标准2.5 V 0.25 /spl mu/m CMOS技术的高压输出驱动器","authors":"B. Serneels, T. Piessens, M. Stepert, W. Dehaene","doi":"10.1109/ISSCC.2004.1332636","DOIUrl":null,"url":null,"abstract":"A robust 7.5 V output driver is realized in standard 2.5 V 0.25 /spl mu/m CMOS. The chip delivers an output swing of 6.46 V to a 50 /spl Omega/ load with a 10 MHz input square wave. A dual-tone PWM signal at 70 kHz and 250 kHz results in an IM3 of -65 dBm. The on-resistance is 5.9 /spl Omega/.","PeriodicalId":273317,"journal":{"name":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"A high-voltage output driver in a standard 2.5 V 0.25 /spl mu/m CMOS technology\",\"authors\":\"B. Serneels, T. Piessens, M. Stepert, W. Dehaene\",\"doi\":\"10.1109/ISSCC.2004.1332636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A robust 7.5 V output driver is realized in standard 2.5 V 0.25 /spl mu/m CMOS. The chip delivers an output swing of 6.46 V to a 50 /spl Omega/ load with a 10 MHz input square wave. A dual-tone PWM signal at 70 kHz and 250 kHz results in an IM3 of -65 dBm. The on-resistance is 5.9 /spl Omega/.\",\"PeriodicalId\":273317,\"journal\":{\"name\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2004.1332636\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2004.1332636","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A high-voltage output driver in a standard 2.5 V 0.25 /spl mu/m CMOS technology
A robust 7.5 V output driver is realized in standard 2.5 V 0.25 /spl mu/m CMOS. The chip delivers an output swing of 6.46 V to a 50 /spl Omega/ load with a 10 MHz input square wave. A dual-tone PWM signal at 70 kHz and 250 kHz results in an IM3 of -65 dBm. The on-resistance is 5.9 /spl Omega/.