直接带隙GeSn合金的应变工程

11th International Conference on Group IV Photonics (GFP) Pub Date : 2014-11-24 DOI:10.1109/GROUP4.2014.6962004

S. Wirths, D. Stange, R. Geiger, Z. Ikonić, T. Stoica, G. Mussler, J. Hartmann, H. Sigg, D. Grutzmacher, S. Mantl, D. Buca

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引用次数: 3

摘要

从实现直接带隙半导体的角度出发，介绍了应变工程(Si)GeSn/GeSn异质结构的生长和表征，包括能带结构和增益计算。

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Strain engineering for direct bandgap GeSn alloys

The growth and characterization, including band structure and gain calculations, of strain engineered (Si)GeSn/GeSn heterostructures with large Sn content are presented and discussed in the view of the realization of a direct band gap semiconductor.

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11th International Conference on Group IV Photonics (GFP)

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