Asymmetric multiple quantum well lasers and amplifiers

Band engineering conception of asymmetric quantum-well (QW) heterostructures widens possibilities to control functional performances of semiconductors lasers and other semiconductor optoelectronic devices. We have analyzed a new type of laser diodes and amplitudes based on asymmetric multiple-QW heterostructures having active layers of different thicknesses and component compositions. For such QW systems, it is possible to change the optical gain spectrum in a wide range and to control the set of definite amplification frequencies due to selecting the width, component composition, and doping of QW and barrier regions.