CMOS静态RAM芯片中的读干扰错误

S. H. Wood, J.C. Marr, T.T. Nguyen, D. J. Padgett, J.C. Tran, T. Griswold, D.C. Lebowitz
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引用次数: 0

摘要

作者对TCC244 CMOS静态RAM芯片中的模式敏感软错误(读干扰错误)进行了广泛的研究。TCC244,也被称为SA2838,是一款抗辐射、抗单事件干扰(SEU)的4 × 256内存芯片。这个装置被美国宇航局的喷气推进实验室用于伽利略号和麦哲伦号宇宙飞船,这两艘飞船将分别与木星和金星相遇。该器件设计的两个方面导致读取干扰错误的发生:从地址引脚到单元阵列的信号路径的透明性,以及阵列中心单元的Vdd和Vss线的大电阻。在读取干扰失败期间进行的探针测量说明了地址倾斜和芯片中的数据模式如何结合产生位翻转。由单个电池电容和供电线路中的电阻组成的电容电荷泵将电池内部电压和本地供电电压同时泵降,直到发生位翻转。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Read disturb errors in a CMOS static RAM chip
The authors describe an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard, single-event-upset (SEU)-resistant 4 by 256 memory chip. This device is being used by NASA's Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.<>
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