拉曼光谱分析中用于结构和材料分析的Si/SiGe结构的化学斜切

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088505

R. Srnanck, R. Kinder, D. Donoval, L. Peternai, I. Novotný, J. Geurts, D. Mcphail, R. Chater, Á. Nemcsics

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引用次数: 0

摘要

采用化学蚀刻法制备了Si/SiGe结构的斜面。斜角表面光滑，斜角范围在10/sup -4/ rad之间。利用斜角的拉曼光谱测定了SiGe合金的厚度和组成，并与结构的光电流响应谱进行了比较。

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Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy

Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10/sup -4/ rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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