热不平衡条件下两个并联sic - mosfet的电热联合仿真

Y. Mukunoki, Takeshi Horiguchi, A. Nishizawa, Kentaro Konno, T. Matsuo, M. Kuzumoto, M. Hagiwara, H. Akagi
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引用次数: 12

摘要

本文描述了两个并联的SiC-MOSFET的电热联合仿真,该仿真采用了离散SiC-MOSFET的温度相关紧凑模型。在原有模型的基础上,通过对输出特性和阈值电压的适当修改,建立了温度相关的紧凑模型。这种紧凑的模型还能精确再现漏极电流高区域的瞬态波形。实验验证了热不平衡条件下并联sic - mosfet之间的电流共享模拟。基于以上验证,在升压斩波器中进行了电热联合仿真,成功地展示了两个sic - mosfet之间的结温分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electro-thermal co-simulation of two parallel-connected SiC-MOSFETs under thermally-imbalanced conditions
This paper describes electro-thermal co-simulation of two parallel-connected SiC-MOSFETs using a temperature-dependent compact model for a discrete SiC-MOSFET. The temperature-dependent compact model is constructed on the basis of the previous model with appropriate-modification of output characteristics and threshold voltage. This compact model also gives the accurate reproducibility of the transient waveforms in a high region of drain current. The current sharing simulation between the parallel-connected SiC-MOSFETs under thermally-imbalanced conditions is experimentally verified. Based on the above verification, the electro-thermal co-simulation in a boost chopper is conducted, which successfully shows the junction temperature distribution between the two SiC-MOSFETs.
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