氢自由基CVD法制备高质量/spl mu/c-Si:H薄膜[太阳能电池]

Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 Pub Date : 1997-09-29 DOI:10.1109/PVSC.1997.654173

L. Lo, M. Hatta, N. Andoh, H. Nagayoshi, K. Kamisako

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引用次数: 0

摘要

采用氢自由基化学气相沉积(HR-CVD)法制备了未掺杂、磷掺杂和硼掺杂微晶硅(/spl mu/c-Si:H)太阳电池薄膜。研究了沉积条件与/spl mu/c-Si:H薄膜结构、光学和电学性能的关系。获得了具有高电导率的掺杂/spl mu/c-Si:H薄膜和适用于i层的补偿材料，沉积速率高。拉曼光谱计算的晶体体积分数大于0.9。

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Preparation of high-quality /spl mu/c-Si:H films by a hydrogen-radical CVD method [solar cells]

Undoped, phosphorus-, and boron-doped microcrystalline silicon (/spl mu/c-Si:H) solar cell thin films have been prepared by using hydrogen radical chemical vapor deposition (HR-CVD) method. The relationship between deposition conditions and the structural, optical and electrical properties of /spl mu/c-Si:H films were investigated. Doped /spl mu/c-Si:H films with high conductivity and compensated material applicable to i-layers were obtained with high deposition rate. The crystalline volume fraction calculated from Raman spectrum showed a value over 0.9.

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Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997

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