智能电源顶部金属的表面分析:红外热测量和源电位映射

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Pub Date : 2016-06-12 DOI:10.1109/ISPSD.2016.7520861

M. Berkani, S. Lefebvre, G. Rostaing, M. Riccio, A. Irace, R. Ruffilli, P. Dupuy

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引用次数: 1

摘要

现代功率mosfet的可靠性是通过加速电热老化试验来评估的。顶部金属化层重构是在短路条件下运行的电力器件中最常见的退化机制之一。实验分析结果侧重于温度测量和老化过程中的源电位映射，以证实先前关于电参数演变的结果，并为健康监测提供新的工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

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2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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